Data for reference ayers-jcg-135-71

The measurement of threading dislocation densities in semiconductors crystals by X-ray diffraction

J. E. Ayers

Journal of Crystal Growth 135, 71 (1994).

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This item is cited by the following items in the database:

  1. Determination of the dislocation densities in GaN on c-oriented sapphire

Contributed by A submitted manuscript, on Monday, December 16, 1996 7:40:49 PM

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