Data for reference watanabe-jcg-128-391

The Growth of Single Crystalline GaN on a Si Substrate Using AlN as an Intermediate Layer

A Watanabe, T Takeuchi, K Hirosawa, et al.

Journal of Crystal Growth 128(1-4), 391 (1993).

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This item is cited by the following items in the database:

  1. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
  2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by E. Hellman

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