okumura-jcg-120-114

Data for reference okumura-jcg-120-114

Epitaxial Growth of GaAs and GaN by Gas Source Molecular Beam Epitaxy using Organic Group V Compounds

H Okumura, S Misawa, S Yoshida, E Sakuma

Journal of Crystal Growth 120, 114 (1992).

GaAs and GaN epilayers were grown on GaAs substrates by gas source MBE technique using triethylarsine (TEAs) and diethylarsine (DEAsH) as As sources, and dimethylhydrazine (DMHy) as an N source. It was found that GaAs grows layer by layer even when organic arsine molecular sources are used. Cubic GaN was found to grow epitaxially on sufficiently nitrided surfaces of GaAs(001) substrates, in contrast with the growth of hexagonal GaN on (111) surfaces. It was also found that nitridation of GaAs surfaces does not occur when DMHy and DEAsH beams are simultaneously supplied onto the GaAs substrates. Thus, GaN/GaAs multilayers were obtained only by intermittent supply of a DEAsH beam.

Contributed by Hajime Okumura from wall.etl.go.jp. on Friday, May 17, 1996 8:09:09 AM

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