Data for reference takeuchi-jcg-115-634

Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

T Takeuchi, H Amano, K Hiramatsu, N Sawaki, I Akasaki

Journal of Crystal Growth 115, 634 (1991).

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This item is cited by the following items in the database:

  1. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by H. Marchand from montreal.ucsb.edu. on Thursday, February 11, 1999 2:44:05 PM

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