Data for reference hiramatsu-jcg-115-628

Growth mechanism of GaN grown on sapphire with AlN buffer layer by MOVPE

K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi, K. Oki

Journal of Crystal Growth 115, 628 (1991).

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This item is cited by the following items in the database:

  1. High quality GaN films - growth and properties

Contributed by A submitted manuscript, on Thursday, August 13, 1998 12:55:35 AM

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