Data for reference kato-jcg-115-174

Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth

K. Kato, T. Kusunoki, C. Takenaka, T. Tanahashi, K. Nakajima

Journal of Crystal Growth 115, 174 (1991).

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This item is cited by the following items in the database:

  1. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

Contributed by A submitted manuscript, on February 23, 1998 3:30:29 PM

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