Data for reference kean-jcg-111-189

Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures

A. H. Kean, C. R. Stanley, M. C. Holland, J. L. Martin, J. N. Chapman

Journal of Crystal Growth 111, 189 (1991).

The authors report on results of measurements of Ga desorption rate by cross-sectional transmission electron microscopy

This item is cited by the following items in the database:

  1. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia

Contributed by A submitted manuscript, on Tuesday, May 4, 1999 9:57:33 AM

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