Data for reference naniwae-jcg-99-381

Growth of single crystal GaN substrate using hydride vapor phase epitaxy

K. Naniwae, S. Itoh, H. Amano, K. Itoh, K. Hiramatsu, I. Akasaki

Journal of Crystal Growth 99, 381 (1990).

 

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Free Excitons in GaN
  3. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  4. Gain Spectroscopy of HVPE-Grown GaN
  5. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
  6. Relaxation Process of the Thermal Strain in the GaN/Al2O3 Heterostructure and Determination of the Intrinstic Lattice Constants of GaN Free from the Strain
  7. MOVPE of Thick InGaN on Sapphire Substrate
  8. Review of polarity determination and control of GaN

Contributed by S. Strite
Modified by jian xu from 218.56.144.42 on Wednesday, November 23, 2005 2:34:25 AM

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