Data for reference shen-jcg-106-553

Thermodynamic analysis of molecular beam epitaxy of III-V compounds: Application to the GayIn1-yAs multilayer epitaxy

JY Shen, C Chatillon

Journal of Crystal Growth 106, 553 (1990).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item cites the following items in the database:

  1. Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy
  2. Free and bound excitons in thin wurtzite GaN layers on sapphire

This item is cited by the following items in the database:

  1. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy

Contributed by Sergei Yu. Karpov from sunphys.ioffe.rssi.ru. on Wednesday, May 22, 1996 5:34:10 AM
Modified by D.E. Crawford from macenroe.fysel.unit.no. on Thursday, February 20, 1997 10:37:56 AM
Modified by D.E. Crawford from macenroe.fysel.unit.no. on Thursday, February 20, 1997 10:40:21 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 4:44:25 PM.
© 1998 The Materials Research Society