Data for reference akasaki-jcg-98-209

Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga 1-xAl xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE

I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki

Journal of Crystal Growth 98, 209 (1989).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
  3. Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.
  4. Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
  5. Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
  6. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
  7. Relaxation Process of the Thermal Strain in the GaN/Al2O3 Heterostructure and Determination of the Intrinstic Lattice Constants of GaN Free from the Strain
  8. High quality GaN films - growth and properties
  9. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by S. Strite

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