Data for reference auvray-jcg-95-288

X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (0 0 1) substrates

P. Auvray, M. Baudet, A. Regreny

Journal of Crystal Growth 95, 288 (1989).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2

Contributed by A submitted manuscript, on Friday, June 20, 1997 10:01:58 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 4:46:30 PM.
© 1998 The Materials Research Society