Data for reference seki-jcg-78-342

Thermodynamic analysis of molecular beam epitaxy of III-V semiconductors

H. Seki, A. Koukitu

Journal of Crystal Growth 78, 342 (1986).

The authors present a theoretical study of III-V semiconductors MBE

This item is cited by the following items in the database:

  1. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia

Contributed by A submitted manuscript, on Tuesday, May 4, 1999 9:56:39 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 5:58:46 PM.
© 1998 The Materials Research Society