Data for reference hashimoto-jcg-68-163

Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3

M. Hashimoto, H. Amano, N. Sawaki, I. Akasaki

Journal of Crystal Growth 68, 163 (1984).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. The role of gaseous species in group-III nitride growth
  3. Review of polarity determination and control of GaN

Contributed by S. Strite


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