Data for reference karpinski-jcg-66-1

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

J. Karpinski, J. Jun, S. Porowski

Journal of Crystal Growth 66, 1 (1984).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Recent Results in the Crystal Growth of GaN at High N2 Pressure
  3. Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
  4. High temperature surface degradation of III–V nitrides
  5. Growth of Bulk AlN and GaN Single Crystals by Sublimation.
  6. Prospects for high-pressure crystal growth of III-V nitrides
  7. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

Contributed by S. Strite

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