Data for reference slack-jcg-34-263

Growth of high purity AlN crystals

G. A. Slack, T. F. McNelly

Journal of Crystal Growth 34, 263 (1976).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. High temperature surface degradation of III–V nitrides
  3. Growth of Bulk AlN and GaN Single Crystals by Sublimation.
  4. Current status of GaN crystal growth by sublimation sandwich technique
  5. New Technique for Sublimation Growth of AlN Single Crystals
  6. Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
  7. Wet Chemical Etching of AlN Single Crystals
  8. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
  9. The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation

Contributed by S. Strite

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