Data for reference madar-jcg-31-197

High pressure solution growth of GaN

R. Madar, G. Jacob, J. Hallais, R. Fruchart

Journal of Crystal Growth 31, 197 (1975).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. High temperature surface degradation of III–V nitrides
  3. Relaxation Process of the Thermal Strain in the GaN/Al2O3 Heterostructure and Determination of the Intrinstic Lattice Constants of GaN Free from the Strain

Contributed by S. Strite

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