Data for reference rozgonyi-jcg-27-106

Control of lattice parameters and dislocations in the system Ga1-xAlxAs1-yPy/GaAs

G. Rozgonyi, P. Petroff, M. Panish

Journal of Crystal Growth 27, 106 (1974).

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This item is cited by the following items in the database:

  1. Strain relaxation in GaN layers grown on porous GaN sublayers

Contributed by A submitted manuscript, on Wednesday, October 27, 1999 3:21:35 PM

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