1961

• Exciton structure and Zeeman effects in cadmium selenide

1964

• Double Injection in Deep-Lying Impurity

1970

• Low-temperature luminescence of GaN

1971

• Pressure and temperature dependence of the absorption edge in GaN
• Determination of kilovolt electron energy dissipation vs. penetration distance in solid materials

1972

• Luminescence of Zn- and Cd-doped GaN

1973

• Dielectric Parameterization of Raman Lineshapes for GaP with a Plasma of Charge Carriers
• Epitaxially grown AlN and its optical band gap
• CW degradation at 300 K of GaAs double-heterostructure junction lasers. II. Electronic gain,
• Luminescence of Be- and Mg-doped GaN

1974

• Properties of Zn-doped GaN. I. Photoluminescence
• Luminescence in epitaxial GaN:Cd
• Structure of vapor-deposited Ga_xIn_1-xAs crystals
• Properties of Zn-doped GaN. II. Photoconductivity
• Investigation of kilovolt electron energy dissipation in solids (by beam-induced currents in MOS capacitor)

1975

• Scanning electron microscopy studies of GaN
• Admittance Spectroscopy in Semiconductors
• Preparation and optical properties of Ga _1-xIn _xN thin films
• Growth morphology and surface-acoustic-wave measurements of AlN films on sapphire
• Thermal expansion of some diamondlike crystals

1976

• Photoluminescence of ion-implanted GaN

1977

• Electric properties of GaN light-emitting diodes
• The work function of the elements and its periodicity

1978

• Plasma deposition of Ga- and GaN

1979

• Composition and refractive index of Ga_1-xAl_xAs determined by ellipsometry
• Properties of VPE-grown GaN doped with Al and some iron-group metals
• Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region

1980

• Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditions
• Properties of Zn-doped VPE-grown GaN. II. Optical cross sections

1981

• Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminum

1982

• Basal orientation aluminum nitride grown at low temperature by rf diode sputtering
• Properties of Al/x/Ga/1-x/N films prepared by reactive molecular beam epitaxy
• Electron channeling patterns in the scanning electron microscope,

1984

• Auger electron and x-ray photoelectron spectroscopy of sputter deposited aluminum nitride
• Secondary Ion Mass Spectrometry Analysis of Impurity Distribution Across Liquid Encapsulated Czochralski GaAs Wafers
• Atomic mixing and electron range effects in ultrahigh-resolution profiles of the Ta₂O₅/Ta interface by argon sputtering with Auger electron spectroscopy
• GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition

1985

• Study of cracking mechanism in GaN/alpha -Al₂O₃ structure

1986

• Optical band gap of indium nitride
• Infrared absorption in indium nitride
• Evaporated Sn-doped In₂O₃ films: basic optical properties and applications to energy efficient windows

1987

• Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy
• Energy band-gap bowing parameter in an Al_xGa_{1- x} N alloy
• Time-resolved spectroscopy of Zn- and Cd-doped GaN
• Electronic structure of an AlN film produced by ion implantation, studied by electron spectroscopy

1988

• A new technique for crystallographic characterization of heteroepitaxial crystal films
• Electrical properties of ion-implanted p-n junction diodes in β-SiC
• Distribution of atoms in mixed III-V compounds
• Optical properties and microstructure of reactively sputtered indium nitride thin films
• Substrate-polarity dependence of metal-organic vapor- phase epitaxy-grown GaN on SiC
• Influence of substrate-induced misfit stresses on the miscibility gap in epitaxial layers: Application to III-V alloys

1989

• Photoemission study of nitrogen-implanted GaAs surfaces
• Preparation and properties of III-V nitride thin films
• Piezoelectric properties and elastic constants of 4H and 6H SiC at temperatures 4-320K

1990

• Characterization of donorlike interface states which play a dominant role in the surface potential pinning in AlN/GaAs interfaces
• Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma
• Deep Donor Levels (DX Centers) in III-V Semiconductors
• Characterization of rf-sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x-ray precession method
• Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular-beam epitaxy: x-ray and soft x-ray photoemission spectroscopy

1991

• Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on beta -SiC
• Growth of Al nitride layers on GaAs(100) by reaction with condensed ammonia
• Dynamics of laser sputtering at GaN, GaP, and GaAs surfaces

1992

• Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon
• In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
• Deep implantation of nitrogen into GaAs for selective three-dimensional microstructuring
• N vacancies in Al_xGa_1-xN
• The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy

1993

• A quantum statistical theory of linewidths of radiative transitions due to compositional disordering in semiconductor alloys
• Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
• Luminescence due to lattice mismatch defects in ZnTe layers grown by metalorganic vapor phase epitaxy
• Deposition and surface characterization of high quality single crystal GaN layers
• Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy
• Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
• Magnitude, Origin, and Evolution of Piezoelectric Optical Nonlinearities in Strained [111]B InGaAs/GaAs Quantum-Wells
• Pressure-induced rocksalt phase of aluminum nitride: A metastable structure at ambient condition
• Structural and Electrical Properties of Reactively Sputtered Inn Thin Films on AlN-Buffered (00.1) Sapphire Substrates: Dependence on Buffer and Film Growth Temperatures and Thicknesses
• Monte Carlo simulation of electron transport in gallium nitride
• In_xGa_(1-x)N/In_yGa_(1-y)N superlattices grown on GaN films
• Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
• Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy
• Study of Schottky contacts on n-Ga_0.51In_0.49P by low-pressure metal-organic chemical-vapor deposition
• The nature of donor conduction in n-GaN
• Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
• Gallium Arsenide Passivation Through Nitridation with Hydrazine
• The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure
• Doping of GaAs Using SF6 Plasma Treatment

1994

• Double Injection in Deep-Lying Impurity Semiconductors
• Raman scattering from LO phonon-plasmon coupled modes in gallium nitride
• Transparent and conductive impurity-doped GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method
• A Crystallographic Model of (00.1) Aluminum Nitride Epitaxial Thin Film Growth on (00.1) Sapphire Substrate
• Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates
• The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition
• Electron mobilities in gallium, indium, and aluminum nitrides
• Thermally annealed GaN nucleation layers and the device- quality metal organic chemical vapor deposition growth of Si-doped GaN films on (00.1) sapphire
• Ar⁺-ion milling characteristics of III-V nitrides
• Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
• Thermal stability of GaN thin films grown on (0001) Al₂O₃, (0112) Al₂O₃ and (0001)_Si 6H-SiC substrates
• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
• Analysis of deep levels in n-type GaN by transient capacitance methods
• Theoretical study of GaN growth: A Monte Carlo approach
• Simulations for the transient response of graded Al_xGa_1-xN submicron photodetectors
• Growth of GaN by ECR plasma assisted MBE: The role of charged species
• Thermal expansion of gallium nitride
• Strain effects in epitaxial GaN grown on AlN-buffered Si(111)
• Nonlinear-Optical Response, Screening, and Distribution of Strain in Piezoelectric Multiple-Quantum Wells
• High brightness InGaN/AlGaN double-heterostructure light-emitting diodes
• Defect ordering in epitaxial alpha -GaN(0001)

1995

• High-temperature ohmic contact to n-type 6H-SiC using nickel
• Current-voltage characteristics of strained piezoelectric structures
• Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
• Analysis of two-step-growth conditions for GaN on an AlN buffer layer
• Theoretical study of electron transport in gallium nitride
• Thermal stress in GaN epitaxial layers grown on sapphire substrates
• Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
• GaP_1-xN_x alloys formed by ion implantation
• Second order Raman spectroscopy of the wurtzite form of GaN
• Alloy-scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides
• Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
• Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates
• Plasma-assisted low-pressure metalorganic chemical vapor deposition of GaN on GaAs substrates
• H, He, and N implant isolation of n-type GaN
• Elastic strain relaxation in GaN-AlN-GaN semiconductor- insulator-semiconductor structures
• Base transit time of GaN/InGaN heterojunction bipolar transistors
• Epitaxial Growth of 3C-SiC Films on 4 in. diam (100) Silicon Wafers by Atmospheric Pressure Chemical Vapor Deposition,
• Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition
• The influence of CH₄/H₂/Ar plasma etching on the conductivity of n-type gallium nitride
• Optical characterization of GaN films by photoreflectance and photocurrent measurement

1996

• The growth and properties of Al and AlN films on GaN(0001)-(1 (times) 1)
• Electronic properties of zinc-blende GaN, AlN, and their alloys Ga_1-xAl_xN
• Optically pumped GaN/Al_0.1Ga_0.9N double- heterostructure ultraviolet laser
• Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
• Degradation and Failure of MEH-PPV Light-emitting Diodes
• Numerical simulation of wide band-gap AlGaN/InGaN light- emitting diodes for output power characteristics and emission spectra
• Characteristics of light-emitting diodes based on GaN p- n junctions grown by plasma-assisted molecular beam epitaxy
• Excitonic emissions from hexagonal GaN epitaxial layers
• Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy
• Photoluminescence study of the 1.047 eV emission in GaN
• Elastic constants of gallium nitride
• Nitridation process of sapphire substrate surface and its effect on the growth of GaN
• Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition
• Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
• Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wells
• Free excitonic transitions in GaN, grown by metal- organic chemical-vapor deposition
• Semiconductor ultraviolet detectors
• Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
• Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin- orbit coupling
• Magneto-optical studies of GaN and GaN/Al_xGa_{1- x}N: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
• Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN
• Study of oxygen chemisorption on the GaN(0001)-(1(times) 1) surface
• Schottky contact and the thermal stability of Ni on n-type GaN
• Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition
• Effect of e-beam irradiation on a p-n junction GaN light emitting diode
• Thermal stability of W ohmic contacts to n-type GaN
• Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field effect transistor
• Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/
• Cl₂/Ar and CH₄/H₂/Ar dry etching of III-V nitrides
• Raman scattering study of GaN films
• Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique
• Electrical conduction in platinum-gallium nitride Schottky diodes
• Luminescence studies of GaN grown on GaN and GaN/AIN buffer layers by metalorganic chemical vapor deposition
• Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
• Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states
• Optical properties of GaN epilayers on sapphire
• Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy
• Structural properties of cubic GaN epitaxial layers grown on beta-SiC
• On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy
• Observation of room temperature surface-emitting stimulated emission from GaN:Ge by optical pumping
• Strain Effect on electronic and optical properties of GaN/AlGaN QW Lasers

1997

• Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
• Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces
• Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
• Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III-V nitrides
• Transient Ballistic Transport in GaN
• Optical Confinement and Threshold Currents in III-V Nitride Heterostructures: Simulation
• High Temperature Behavior of Pt and Pd on GaN
• Biaxial strain dependence of exciton resonance energies in wurtzite GaN
• Structural properties of ZnSe layers grown on (001) GaAs substrates tilted toward [110] and [010]
• Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
• Properties of a photovoltaic detector based on an n-type GaN Schottky barrier
• Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
• Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
• The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals
• Optical constants of epitaxial AlGaN films and their temperature dependence
• Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC
• Basal-plane stacking faults and polymorphism in AlN, GaN, and InN
• Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
• Interfacial reactions between nickel thin films and GaN
• Persistent photoconductivity in n-type GaN

1998

• Electronic band structures and effective-mass parameters of wurtzite GaN and InN
• Magnesium acceptor levels in GaN studied by photoluminescence
• Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition
• The effect of thermal annealing on the Ni/Au contact of p-type GaN
• Photocurrent and photoluminescence measurements in the near-band-edge region of 6H GaN
• Magnetoexcitons in anisotropic semiconductors
• Determination of valence band splitting parameters in GaN
• Cathodoluminescence studies of the deep level emission bands of Al_xGa_1-xN films deposited on 6H-SiC (0001)
• Lattice site location studies of ion implanted 8Li in GaN
• Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy
• Photoluminescence spectroscopy of Mg-doped GaN
• Refractive index of InGaN/GaN quantum well
• Deep Centers and their Spatial Distribution in Undoped GaN
• GaN: Processing, defects, and devices

1999

• Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
• Piezoelectric-Franz-Keldysh effect in strained GaInN/GaN heterostructures
• Dislocation mediated surface morphology of GaN
• performance evaluation of high power wide bandgap semiconductor rectifiers
• Structure and composition of GaN (0001) A and B surfaces
• Brillouin scattering study of bulk GaN
• Structural and vibrational propereties of GaN
• Effect of nitrogen on the band structure of GaInNAs alloys
• Strain relaxation of GaNAs on GaAs (011) grown by molecular-beam epitaxy
• GaN: processing, defects and Devices

2000

• Heavy doping effects in Mg-doped GaN
• Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
• Effects of rapid thermal annealing on the optical properties of GaN_xAs_1-x/GaAs single quantum well structure grown by molecular beam epitaxy
• Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy
• Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
• Photoluminescence and cathodoluminescence of GaN doped with Pr
• Plasma cleaning and nitridation of sapphire surfaces: New evidence from in situ real time ellipsometry
• Electrical depth profile of p-type GaAs/Ga(As,N) heterostructures determined by capacitance-voltage measurements
• Visible emission from AlN doped with Eu and Tb ions

98

• Analysis of optical gain and threshold current density of InGaN/GaN/AlGaN quantum well lasers

last updated Thursday, February 14, 2002 1:49:01 PM.
© 2001 The Materials Research Society