yeo-jap-84-1813

Data for reference yeo-jap-84-1813

Analysis of optical gain and threshold current density of InGaN/GaN/AlGaN quantum well lasers

YC Yeo, TC Chong, MF Li, WJ Fan

Journal of Applied Physics 84(4), 1813 (98).

The valence subband structures, density-of-states, and optical gain of (0001) wurtzite (WZ) InxGa1-xN/GaN quantum wells (QWs) are studied. The effects of quantum confinement and compressive strain are examined by varying the well width and mole fraction of In in the well material. A narrower well width and a higher In mole fraction in the well lead to TE enhancement and TM suppression of the optical gain. The transparent current density for a single QW is obtained to be 200 A/cm2. The InGaN/GaN/AlGaN separate confinement heterostructure multiple-QW laser structure is also analyzed and optimized for lower threshold current density.

This item is cited by the following items in the database:

Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Contributed by YC Yeo from soi.eecs.berkeley.edu. on Tuesday, July 28, 1998 8:12:45 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.