Data for reference reynolds-jap-88-1460

Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy

DC Reynolds, DC Look, B Jogai, JE Hoelscher, RE Sherriff, RJ Molnar

Journal of Applied Physics 88(3), 1460 (2000).

The authors report the surface strain as a function of GaN film thickness.

This item cites the following items in the database:

  1. Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy

This item is cited by the following items in the database:

  1. Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy
  2. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers

Contributed by W.K. Fong from 158.132.12.18 on Wednesday, October 11, 2000 10:51:59 PM

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