Data for reference pearton-jap-86-r1

GaN: processing, defects and Devices

S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren

Journal of Applied Physics 86, R1 (1999).

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This item is cited by the following items in the database:

  1. Growth and Device Performance of GaN Schottky Rectifiers
  2. High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Contributed by A submitted manuscript, on Thursday, June 24, 1999 5:04:29 PM

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