Data for reference pearton-jap-86-1

GaN: Processing, defects, and devices

S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren

Journal of Applied Physics 86(1), 1 (1998).

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This item is cited by the following items in the database:

  1. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
  2. Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
  3. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by A submitted manuscript, on Monday, December 13, 1999 11:53:02 PM

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