polyakov-jap-84-870

Data for reference polyakov-jap-84-870

Deep Centers and their Spatial Distribution in Undoped GaN

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M. Shin, M. Skowronski, D.W. Greve

Journal of Applied Physics 84(2), 870 (1998).

Deep levels and their spatial distribution were studied in undoped and lightly Si doped GaN samples grown by OMVPE. The presence of centers near Ec-(0.1-0.3) eV and Ev+0.9 eV was demonstrated by means of temperature dependence of dark current measurements and photocurrent relaxation spectroscopy measurements. It was shown that the distribution of deep centers in GaN is not uniform, but rather these centers form a cellular structure with the cell walls being depleted of nonradiative recombination centers and enriched with the Ev+0.9 eV traps. Persistent photoconductivity in n-GaN was studied in some detail and shown not to be associated with Si. Activation energy of the process was measured to be close to 0.2 eV.

This item is cited by the following items in the database:

Current limitation after pinch-off in AlGaN/GaN FETs

Contributed by A. Y. Polyakov from girmet.ru. on Monday, August 24, 1998 5:22:04 AM

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