Data for reference leung-jap-84-6312

Refractive index of InGaN/GaN quantum well

MMY Leung, AB Djurisic, EH Li

Journal of Applied Physics 84(11), 6312 (1998).

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This item cites the following items in the database:

  1. k.p method for strained wurtzite semiconductors
  2. Bowing parameters for zinc-blende Al1-xGaxN and Ga1-xInxN
  3. First-principles calculations of effective-mass parameters of AlN and GaN
  4. Electronic band structures and effective-mass parameters of wurtzite GaN and InN

Contributed by YC Yeo from fujikun.eecs.berkeley.edu. on Thursday, February 25, 1999 8:18:53 PM

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