Data for reference chichibu-jap-83-2860

Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition

S. Chichibu, M. Arita, H. Nakanishi, J. Nishio, L. Nishio, Y. Kokuban, K. Itaja

Journal of Applied Physics 83, 2860 (1998).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by A submitted manuscript, on Friday, August 28, 1998 6:11:59 PM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 7:38:34 PM.
© 1998 The Materials Research Society