Electronic band structures and effective-mass parameters of wurtzite GaN and InN

Journal of Applied Physics 83(3), 1429 (1998).

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This item cites the following items in the database:

1. Band structures of GaN and AlN
2. Band structure and reflectivity of GaN
3. Fundamental optical transitions in GaN
4. Optical and structural properties of III-V nitrides under pressure
5. k.p method for strained wurtzite semiconductors
6. III-V Nitrides for Electronic and Optoelectronic Applications
7. Absorption, reflectance, and luminescence of GaN epitaxial layers
8. Pseudopotential band structure of indium nitride
9. Band structures of semiconductors
10. Electronic Structure, Surface Composition and Long Range Order in GaN
11. Band structure of InN
12. Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN
13. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
14. First-principles total-energy calculation of gallium nitride
15. First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride
16. Fundamental energy gap of GaN from photoluminescence excitation spectra
17. Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,
18. Characteristics of InGaN multi-quantum-well-structure laser diodes
19. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
20. Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
21. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
22. Preparation and optical properties of Ga _1-xIn _xN thin films
23. Luminescence and Reflectivity in the Exciton Region of Homoepitaxial GaN layers Grown on GaN Substrates
24. The Electronic Structure of Gallium Nitride
25. Quasiparticle band structure of AlN and GaN
26. Optical band gap of indium nitride
27. Pseudofunction theory of the electronic structure of InN
28. Optical properties of indium nitride films
29. Exciton fine structure in undoped GaN epitaxial films
30. Valence band splittings and band offsets of AlN, GaN, and InN
31. Consistent structural properties for AlN, GaN, and InN
32. Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method
33. Electronic, optical, and structural properties of some wurtzite crystals

This item is cited by the following items in the database:

1. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
2. Refractive index of InGaN/GaN quantum well
3. Valence-band structure of wurtzite GaN including the spin-orbit interaction

Contributed by YC Yeo from soi.eecs.berkeley.edu. on Tuesday, May 5, 1998 12:19:32 AM

last updated Wednesday, May 4, 2005 11:46:18 AM.
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