Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Journal of Applied Physics 82(11), 5472 (1997).

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This item cites the following items in the database:

1. GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
2. Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
3. Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy
4. MBE Growth and Properties of GaN and Al_xGa_1-xN on GaN/SiC Substrates
5. Growth and doping of GaN films by ECR assisted MBE
6. In Situ Control of GaN Growth by Molecular Beam Epitaxy
7. The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy
8. Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
9. Growth of GaN by ECR plasma assisted MBE: The role of charged species
10. Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates GaN films on GaN/SiC substrates
11. Monitoring surface stoichiometry with the (2x 2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy
12. Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
13. Structure of GaN Films Grown by Molecular Beam Epitaxy on (0001) Sapphire
14. Photovoltaic effects in GaN structures with p-n junctions
15. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
16. Gallium vacancies and the yellow luminescence in GaN
17. Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

This item is cited by the following items in the database:

1. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
2. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
3. X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
4. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
5. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
6. Review of polarity determination and control of GaN

Contributed by Hugues Marchand from merlin.ucsb.edu. on February 2, 1998 9:39:13 PM
Modified by R. Held from pc22.ece.umn.edu. on February 24, 1998 9:54:50 PM
Modified by R. Held from pc22.ece.umn.edu. on February 24, 1998 9:54:50 PM
Modified by H. Marchand from montreal.ucsb.edu. on Thursday, February 18, 1999 7:38:54 PM

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