Data for reference sugiura-jap-82-4877

Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers

L. Sugiura, K. Itaya, J. Nishio, H. Fujimoto, Y. Kokubun

Journal of Applied Physics 82, 4877 (1997).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
  2. Review of polarity determination and control of GaN

Contributed by A submitted manuscript, on Thursday, August 7, 2003 5:40:38 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 5:56:24 PM.
© 1998 The Materials Research Society