Data for reference wright-jap-82-2833

Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN

AF Wright

Journal of Applied Physics 82(6), 2833 (1997).

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This item is cited by the following items in the database:

  1. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  2. Pinholes, Dislocations and Strain Relaxation in InGaN
  3. High Temperature Elastic Constant Prediction of Some Group III-Nitrides
  4. Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
  5. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
  6. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

Contributed by B. Jahnen from hugo.fen.baynet.de. on Saturday, July 11, 1998 12:41:05 PM

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