Data for reference binet-jap-81-6449

Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

F. Binet, J. Y. Duboz, N. Laurent, E. Rosencher, O. Briot, R. L. Aulombard

Journal of Applied Physics 81(9), 6449 (1997).

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This item is cited by the following items in the database:

  1. Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

Contributed by A submitted manuscript, on Tuesday, June 30, 1998 2:07:41 PM

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