Data for reference shikanai-jap-81-417

Biaxial strain dependence of exciton resonance energies in wurtzite GaN

A Shikanai, T Azuhata, T Sota, S Chichibu, A Kuramata, K Horino, S Nakamura

Journal of Applied Physics 81(1), 417 (1997).

The strain dependence of the free-exciton resonance energies in GaN were studied using photoreflectance measurements. The crystal field splitting and spin-orbit splitting as well as the deformation potentials were determined for the unstrained crystal.

This item is cited by the following items in the database:

  1. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  2. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  3. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  4. Free excitons in strained MOCVD-grown GaN layers

Contributed by M. D. Bremser from gatormac10.mte.ncsu.edu. on Friday, February 14, 1997 11:19:48 AM

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