ishikawa-jap-81-1315

Data for reference ishikawa-jap-81-1315

Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces

H Ishikawa, S Kobayashi, Y Koide, S Yamasaki, S Nagai, J Umezaki, M Koide

Journal of Applied Physics 81(3), 1315 (1997).

Pt, Ni, Pd, Au, Cu, Ti, Al, Ta, and Ni/Au nonalloyed (non-reacted) contacts metals were studied for use on p-GaN. It was found that removal of surface contamination did not significantly reduce the contact resistance, however, contact resistance did not decrease exponentialli with increasing metal work function. This study concluded that large work function metal are desirable for contacts to p-GaN, but none of the studied metals provide the low contact resistance required for blue laser diodes.

This item is cited by the following items in the database:

Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride

Contributed by M. D. Bremser from gatormac10.mte.ncsu.edu. on Friday, February 14, 1997 11:05:04 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.