Data for reference li-jap-81-1005

Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well

W Li, P Bergman, B Monemar, H Amano, I Akasaki

Journal of Applied Physics 81(2), 1005 (1997).

Use of time-resolved photoluminescence emission spectroscopy allowed for the study of the decay dynamics in Si doped InGaN/GaN/AlGaN quantum wells grown by MOCVD. The dominant emission from the well was attributed to the radiative recombination of electrons with photoexcited holes in the InGaN quantum well.

This item is cited by the following items in the database:

  1. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

Contributed by M. D. Bremser from gatormac10.mte.ncsu.edu. on Friday, February 14, 1997 11:13:25 AM

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