Data for reference suzuki-jap-80-6868

Strain Effect on electronic and optical properties of GaN/AlGaN QW Lasers

M. Suzuki, T. Uenoyama

Journal of Applied Physics 80(12), 6868 (1996).

kp calculations of the wurtzite VB. It's concluded that strain in the wurtzite system is only favorable to lasing when it is uniaxial parallel to the c-axis. Therefore basal plane substrates are not optimal to strain enhanced laser design.

This item is cited by the following items in the database:

  1. Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained QW Lasers with a Modulation-doped Structure
  2. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  3. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 11:50:26 AM
Modified by S. Strite from 193.5.61.130 on Monday, January 6, 1997 9:21:44 AM

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