Data for reference tchounkeu-jap-80-5352Optical properties of GaN epilayers on sapphire
M Tchounkeu, O Briot, B Gil, JP Alexis, RL Aulombard
Journal of Applied Physics 80(9), 5352 (1996).
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This item is cited by the following items in the database:
- Comparison of Luminescence and Physical Morphologies of GaN Epilayers
- Time-resolved
photoluminescence studies of InGaN/GaN multiple quantum wells
- Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
- Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
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