Data for reference turnbull-jap-80-4609

Luminescence studies of GaN grown on GaN and GaN/AIN buffer layers by metalorganic chemical vapor deposition

DA Turnbull, XLi, SQ Gu, EE Reuter, JJ Coleman, SG Bishop

Journal of Applied Physics 80(8), 4609 (1996).

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This item is cited by the following items in the database:

  1. Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  2. Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 11:33:24 AM

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