Data for reference wu-jap-80-3228

Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/

XW Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, JS Speck

Journal of Applied Physics 80(6), 3228 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  2. Polarization and band offsets of stacking faults in AlN and GaN
  3. Review of polarity determination and control of GaN

Contributed by Hugues Marchand from morgana.ucsb.edu. on February 4, 1998 8:44:37 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 11:41:06 AM.
© 1998 The Materials Research Society