Data for reference stengel-jap-80-3036

Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field effect transistor

F. Stengel, S. N. Mohammad, H. Morkoc

Journal of Applied Physics 80, 3036 (1996).

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This item is cited by the following items in the database:

  1. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells

Contributed by A submitted manuscript, on Sunday, August 1, 1999 4:35:35 PM

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