Data for reference razeghi-jap-79-7433Semiconductor ultraviolet detectors
M. Razeghi, A. Rogalski
Journal of Applied Physics 79(10), 7433 (1996).
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This item is cited by the following items in the database:
- Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
- Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
- Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers
- High-Performance Solar-Blind AlGaN Schottky Photodiodes
- High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes
Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru
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