Data for reference smith-jap-79-7001

Free excitonic transitions in GaN, grown by metal- organic chemical-vapor deposition

M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang , M. Asif Khan, C. J. Sun, Q. Chen, J. W. Yang

Journal of Applied Physics 79(9), 7001 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Free Excitons in GaN
  2. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature

Contributed by Bo A I Monemar from mac101.ifm.liu.se. on Thursday, May 30, 1996 6:43:29 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru


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