Data for reference uchida-jap-79-3487

Nitridation process of sapphire substrate surface and its effect on the growth of GaN

K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, S. Minagawa

Journal of Applied Physics 79(7), 3487 (1996).

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This item cites the following items in the database:

  1. GaN, AlN, and InN: A review
  2. The preparation and properties of vapor-deposited single-crystal-line GaN
  3. Electrical properties of n-type vapor-grown gallium nitride
  4. The use of metalorganics in the preparation of semiconductor materials. IV. The nitrides of aluminum and gallium
  5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
  6. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth in InN on Si and alpha-Al2O3 substrates
  7. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga 1-xAl xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE

This item is cited by the following items in the database:

  1. Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  2. Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
  3. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  4. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  5. Review of polarity determination and control of GaN

Contributed by Devin E. Crawford from mac16.ee.umn.edu. on Tuesday, April 23, 1996 6:00:00 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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