Data for reference vaudo-jap-79-2799

Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy

R. P. Vaudo, I. D. Goepfert, T. D. Moustakas, D. M. Beyea, T. J. Frey, K. Meehan

Journal of Applied Physics 79(5), 2799 (1996).

It reports the fabrication and characterization of mesa-etched GaN LED grown by MBE.

This item is cited by the following items in the database:

  1. Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
  2. Thermodynamic analysis of molecular beam epitaxy of III-V compounds: Application to the GayIn1-yAs multilayer epitaxy
  3. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Contributed by Yong-Hang Zhang from ises04.es.hac.com. on Tuesday, April 2, 1996 1:48:07 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 11:39:48 AM.
© 1998 The Materials Research Society