Data for reference zorman-jap-78-5136

Epitaxial Growth of 3C-SiC Films on 4 in. diam (100) Silicon Wafers by Atmospheric Pressure Chemical Vapor Deposition,

C. A. Zorman, A. J. Fleischman, A. S. Dewa, M. Mehregany, C. Jacob, S. Nishino, P. Pirouz

Journal of Applied Physics 78, 5136 (1995).

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This item is cited by the following items in the database:

  1. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by A submitted manuscript, on Tuesday, September 25, 2001 6:26:46 PM

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