Data for reference sasaki-jap-77-192

Analysis of two-step-growth conditions for GaN on an AlN buffer layer

T. Sasaki, T. Matsuoka

Journal of Applied Physics 77(1), 192 (1995).

Gallium nitride is grown by metalorganic vapor phase epitaxy with and without a low-temperature-grown AlN buffer layer. Variations in the surface morphology and the layer properties are compared between two-step growth and direct growth to study the effects of various growth conditions. It is found that (1) conditions that stabilize the GaN(0001) surface serve as guidelines for obtaining mirrored surfaces, and (2) raising GaN growth temperature improves crystallographic, electrical, and luminescence properties of GaN. The observed improvement in the layer properties with increase in GaN growth temperature sugggests that increasing N2 dissociation pressure does not affect GaN properties. GaN growth conditions are analyzed thermodynamically to show that NH3 in the growth ambients has the potential to suppress thermal dissociation of GaN.

This item is cited by the following items in the database:

  1. Alternative N precursors and Mg doped GaN grown by MOVPE
  2. Crystalline Structure changes in GaN Films Grown at Different Temperatures

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1995JAP....77..192S
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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