Data for reference nakamura-jap-76-8189

High brightness InGaN/AlGaN double-heterostructure light-emitting diodes

S. Nakamura, T. Mukai, M. Senoh

Journal of Applied Physics 76(12), 8189 (1994).

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This item is cited by the following items in the database:

  1. LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
  2. Determination of the dislocation densities in GaN on c-oriented sapphire
  3. Preparation of Sapphire for High Quality III-Nitride Growth

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Modified by S. Strite from internet-gw.zurich.ibm.ch. on Wednesday, September 25, 1996 9:45:34 AM

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