meng-jap-76-7824

Data for reference meng-jap-76-7824

Strain effects in epitaxial GaN grown on AlN-buffered Si(111)

W. J. Meng, T. A. Perry

Journal of Applied Physics 76(12), 7824 (1994).

Growth of GaN thin films on AlN-buffered Si(111) by ultrahigh-vacuum rf glow discharge reactive magnetron sputtering is reported. Epitaxy of GaN is established by x-ray and electron diffraction. Raman scattering from the epitaxial films consistent with that of wurtzitic GaN is observed. The ion energies involved in the growth process are quantified by measuring the plasma potentials of the Ar/N2 glow discharge by an emissive Langmuir probe technique. As a function of increasing input power, a systematic increase in ion energies and a systematic straining of the GaN lattice are observed. Measured GaN phonon energy scales with lattice strain.

This item is cited by the following items in the database:

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1994JAP....76.7824M
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.