leszczynski-jap-76-4909

Data for reference leszczynski-jap-76-4909

Thermal expansion of gallium nitride

M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski , T. D. Moustakas

Journal of Applied Physics 76(8), 4909 (1994).

Lattice constants of gallium nitride (wurzite structure) have been measured at temperatures 294 - 753 K. The measurements were performed by using x-ray diffractometry. Two kinds of samples were used: (1) bulk monocrystal grown at pressure of 15 kbar, (2) epitaxial layer grown on a sapphire substrate. The latter had a smaller lattice constant in a direction parallel to the interface plane by about 0.03%. This difference was induced by a higher thermal expansion of the sapphire with respect to the GaN layer. However, this thermal strain was created mainly at temperatures below 500 - 600 K. Above these temperatures the lattice mismatch in parallel direction diminished to zero at a temperature of about 800 K.

This item is cited by the following items in the database:

Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1994JAP....76.4909L
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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