Data for reference molnar-jap-76-4587

Growth of GaN by ECR plasma assisted MBE: The role of charged species

R.J. Molnar, T.D. Moustakas

Journal of Applied Physics 76(8), 4587 (1994).

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This item is cited by the following items in the database:

  1. Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  2. The role of gaseous species in group-III nitride growth
  3. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
  4. Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
  5. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
  6. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by D. Korakakis from ppp-81-30.bu.edu. on Thursday, September 26, 1996 9:37:14 PM

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