wang-jap-76-3502

Data for reference wang-jap-76-3502

Theoretical study of GaN growth: A Monte Carlo approach

Kung Wang, Jasprit Singh, Dimitris Pavlidis

Journal of Applied Physics 76(6), 3502 (1994).

An atomistic model consistent with a variety of experimental observations is developed for GaN growth by molecular-beam epitaxy. The model is used in Monte Carlo simulation to study the impact of substrate temperature, Ga flux, and V/III (group-V element to group-III element) ratio on growth rate and growth front quality. The growth rate increases with the V/III ratio reaching a saturation value which is determined by the Ga flux. The quality of the growth front improves by using a smaller Ga flux for a fixed temperature and V/III ratio or by reducing the V/III ratio at a given temperature. A consideration of the growth kinetics suggests that GaN grown surfaces are likely to be Ga stabilized. These theoretically estimated trends are evidenced by two-dimensional and three-dimensional growth front contours evaluated under various growth conditions.

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Theoretical study of GaN growth: A Monte Carlo approach

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Theoretical study of GaN growth: A Monte Carlo approach

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1994JAP....76.3502W
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by Kun Wang from nor.engin.umich.edu. on Friday, September 18, 1998 12:28:59 AM

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