Data for reference hacke-jap-76-304

Analysis of deep levels in n-type GaN by transient capacitance methods

P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki , K. Tadatomo, K. Miyake

Journal of Applied Physics 76(1), 304 (1994).

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This item is cited by the following items in the database:

  1. Degradation mechanisms in AlGaN/InGaN/GaN light sources

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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